IRFZ44N
is specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These features combine
to make this design an extremely efficient and reliable device for use
in Automotive applications and a wide variety of other applications.
Features:-
• Advanced Process Technology
• Ultra Low On-Resistance
• 175°C Operating Temperature
• Fast Switching
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
Detailed Specifications:-
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Drain-Source Breakdown Voltage (Vds) | 55V |
Continuous Drain Current (Id) | 49A |
Drain-Source Resistance (Rds On) | 0.0175Ohms |
Gate-Source Voltage (Vgs) | 20V |
Gate Charge (Qg) | 63 nC |
Operating Temperature Range | -55 – 175°C |
Power Dissipation (Pd) | 94W |
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