IRF540N N-Channel HEXFET Power MOSFET TO-220 Package

IRF540NPBF N-Channel HEXFET Power MOSFET TO-220 Package

The best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. Preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

Features/Specs:

• Part No: IRF540NPBF
• Manufacturer: Infineon Technologies
• Drain to Source Voltage (Vdss): 100 V
• Current – Continuous Drain (Id) @ 25°C: 33A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
• Vgs (Max): ±20V
• Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
• Power Dissipation (Max): 130W (Tc)
• Operating Temperature: -55°C ~ 175°C (TJ)
• Compliant to RoHS directive 2002/95/EC

Package Includes:

• 1 x IRF540NPBF N-Channel HEXFET Power MOSFET TO-220 Package

Note: Product Images are shown for illustrative purposes only and may differ from the actual product.