IRF9540N – 100V 23A P-Channel Power MOSFET TO-220 Package

IRF9540N – 100V 23A P-Channel Power MOSFET TO-220 Package

The best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. Preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features/Specs:

• Part No: IRF9540N
• Manufacturer: Infineon Technologies
• Number of Channels: 1 Channel
• Transistor Polarity: P-Channel
• Number of Channels: 1 Channel
• Vds – Drain-Source Breakdown Voltage: 100 V
• Id – Continuous Drain Current: 23 A
• Power Dissipation: 140 Watts
• Rds On – Drain-Source Resistance: 117 mOhms
• Vgs – Gate-Source Voltage: – 20 V, + 20 V
• Vgs th – Gate-Source Threshold Voltage: 2.4 V
• Qg – Gate Charge: 64.7 nC
• Operating Temperature: -55°C ~ 150°C (TJ)
• Dynamic dV/dt rating
• 100% avalanche rated
• Fast switching
• Ease of paralleling
• New high voltage benchmark
• Advanced process technology
• Package / Case: TO-220-3

 Package Includes:

• 1 x IRF9540N – 100V 23A P-Channel Power MOSFET TO-220 Package

Note: Product Images are shown for illustrative purposes only and may differ from the actual product.